30N06可被DE030NG-J替代，国产功率低压MOS管场效应管

DE030NG-J替代30N06，国产功率MOS场效应管TO-252封装 N管 60V30A

型号：DE030NG-J

电压电流：60V30A

N管

封装：TO-252

内阻：30mΩ

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications. 

Features：

1) VDS=60V,ID=30A,RDS(ON)<30mΩ@VGS=10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.