BSB012NE2LX替代料PC2R4NG,30V180A N管 功率MOS管场效应管

BSB012NE2LX替代料PC2R4NG,30V180A N管 功率MOS管场效应管

型号：PC2R4NG

电压电流：30V180A

N管

封装：TO-220

应用：消费类工业类等产品

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications. 

Features:

1) VDS=30V,ID=180A,RDS(ON)<2.4mΩ@VGS=10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra low RDS(ON). 

5) Excellent package for good heat dissipation.