中压MOS管PS008NG，N管 70V70A 8.4mΩ 典型7.5Ω

中压MOS管PS008NG，N管 70V70A 8.4mΩ 典型7.5Ω

型号：PS008NG

N管

电压电流：70V70A

内阻：8.4mΩ 典型7.5Ω

封装：TO-220

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications. Features：

1) VDS=68V,ID=80A,RDS(ON)<8.5mΩ@VGS=10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.