RU20130L替换物料DC003NG-E，P TO P兼容RU20130L低压场效应管MOS管

RU20130L替换物料DC003NG-E，P TO P兼容RU20130L低压场效应管MOS管

型号：DC003NG-E

N管

电压电流：30V150A

内阻：2.3mΩ

封装：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

1) VDS=30V,ID=150A,RDS(ON)<3.3mΩ@VGS=10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.