功率MOS管场效应管DE036NG可替代20N06，60V20A 36mΩ

功率MOS管场效应管DE036NG可替代20N06，60V20A 36mΩ

型号：DE036NG

电压电流：60V20A

内阻：36mΩ

封装：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

1) VDS=60V,ID=20A,RDS(ON)<36mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.