BSB012N03LX3 G替代料PC2R4NG，30V180A 2.4mΩ TO-220封装

BSB012N03LX3 G替代料PC2R4NG，30V180A 2.4mΩ TO-220封装

型号：PC2R4NG

电压电流：30V180A

内阻：2.4mΩ

封装：TO-220封装

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications. 

Features：

1) VDS=30V,ID=180A,RDS(ON)<2.4mΩ@VGS=10V

2) Low gate charge. 3) Green device available. 

4) Advanced high cell denity trench technology for ultra low RDS(ON). 

5) Excellent package for good heat dissipation.