CRSS028N10N替代物料BH3R2TG,P TO P兼容CRSS028N10N

CRSS028N10N替代物料BH3R2TG,P TO P兼容CRSS028N10N

型号：BH3R2TG

Description： 

This N-Channel MOSFET uses advanced SGT technology and  design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features： 

1) VDS=100V,ID=170A,RDS(ON)<3.2mΩ@VGS=10V 

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra RDS(ON). 

5) Excellent package for good heat dissipation.