30P03可被DC025PG替代,功率MOS管场效应管

型号：DC025PG

P管

电压电流：-30V-30A

封装：TO-252

内阻：25mΩ

Description：

This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications. 

Features：

1) VDS=-30V,ID=-30A,RDS(ON)<25mΩ@VGS=-10V

2) Low gate charge. 3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.