SUD50N02-06P替换型号DB007NG，完美兼容替换SUD50N02-06P，TO-252封装

SUD50N02-06P替换型号DB007NG，完美兼容替换SUD50N02-06P，TO-252封装

型号：DB007NG

N管

电压电流：20V50A

封装：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications. 

Features：

1) VDS=20V,ID=55A,RDS(ON)<6.5mΩ@VGS=4.5V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.