DE085PG可替代IRFR9024N低压MOS场效应管TO-252 P管 -55V-11A

DE085PG可替代IRFR9024N低压MOS场效应管TO-252 P管 -55V-11A

型号：DE085PG

电压电流：-55V-11A

P管

内阻：70mΩ

封装：TO-252

Description：

This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications. 

Features：

1) VDS=-60V,ID=-18A,RDS(ON)<70mΩ@VGS=-10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.