BSB104N08NP3 G替换型号DH012T2G，100V55A 12mΩ TO-252封装，用于同步整流

BSB104N08NP3 G替换型号DH012T2G，100V55A 12mΩ TO-252封装，用于同步整流

型号：DH012T2G

电压电流：100V55A

内阻：12mΩ

封装：TO-252

应用：同步整流

Description：

This N-Channel MOSFET uses advanced SGT technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications. 

Features：

1) VDS=100V,ID=55A,RDS(ON)<12mΩ@VGS=10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.