低压MOS管场效应管DE035PG可替代30P06 P管 -60V-30A 35mΩ

低压MOS管场效应管DE035PG可替代30P06 P管 -60V-30A 35mΩ

型号：DE035PG

P管

电压电流：-60V-30A

内阻：35mΩ

封装：TO-252

Description：

This P-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

1) VDS=-60V,ID=-30A,RDS(ON)<35mΩ@VGS=-10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.