IRFR024N可被DE036NG替代，国产场效应管MOS管

IRFR024N的替代型号DE036NG，N管 55V16A TO252封装 36mΩ

型号：DE036NG

N管

电压电流：55V16A 

封装：TO252封装

内阻：36mΩ

Description：

This N-Channel MOSFET uses advanced trench technology and 

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=60V,ID=20A,RDS(ON)<36mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.