AM60N02-09D替换型号DB006NG-S，P TO P兼容AM60N02-09D

AM60N02-09D替换型号DB006NG-S，P TO P兼容AM60N02-09D

型号：DB006NG-S

电压电流：20V60A

N管

封装：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications. 

Features：

1) VDS=20V,ID=60A,RDS(ON)<6mΩ@VGS=4.5V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.