电动车控制器中压MOS管PG008NG，N管 82V92A 8mΩ 典型7.1mΩ

电动车控制器中压MOS管PG008NG，N管 82V92A 8mΩ 典型7.1mΩ

型号：PG008NG

N管

电压电流：82V92A

内阻：8mΩ 典型7.1mΩ

封装：TO-220

应用：电动车控制器

Description：

This N-Channel MOSFET uses advanced trench technology and 

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=82V,ID=95A,RDS(ON)<8mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.