RU3070L替代物料DO-004NG-Y/DO-003NG-E,可完全兼容，货源稳定价格优势

RU3070L替代物料DO-004NG-Y/DO-003NG-E,可完全兼容，货源稳定价格优势

DO-004NG-Y资料

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

TO-252封装

1) VDS=30V,ID= A,RDS(ON)<4mΩ@VGS=10V

2) Low gate charge.

3) Green device available.

4) Advanced high cell denity trench technology for ultra RDS(ON).

5) Excellent package for good heat dissipation.

DO-003NG-E资料

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications.

Features：

TO-252封装

1) VDS=30V,ID=150A,RDS(ON)<3.3mΩ@VGS=10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.