BSB017N03LX3 G替代型号PC003NG-E，30V150A 33mΩ

BSB017N03LX3 G替代型号PC003NG-E，30V150A 33mΩ

型号：PC003NG-E

电压电流：30V150A

内阻：33mΩ

封装：TO-220

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications. 

Features：

1) VDS=30V,ID=150A,RDS(ON)<3mΩ @VGS=10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra low RDS(ON). 

5) Excellent package for good heat dissipation.