MSN0230D替代型号DB007NG，P TO P兼容替代MSN0230D

MSN0230D替代型号DB007NG，P TO P兼容替代MSN0230D

型号：DB007NG

电压电流：20V50A

内阻：RDS(ON)<6.5mΩ@VGS=4.5V

N管

封装：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.It can be used in a wide variety of applications. 

Features：

1) VDS=20V,ID=55A,RDS(ON)<6.5mΩ@VGS=4.5V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.