功率MOS场效应管DE018NG-F可替代50N06，60V50A 17mΩ

功率MOS场效应管DE018NG-F可替代50N06，60V50A 17mΩ

型号：DE018NG-F

电压电流：60V50A 

内阻：17mΩ

封装：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and

design to provide excellent RDS(on) with low gate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=60V,ID=50A,RDS(ON)<17mΩ@VGS=10V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON). 

5) Excellent package for good heat dissipation.