900V高耐压功率MOS管FR09NG，N管 8A 1400mΩ 典型1150mΩ

900V高耐压功率MOS管FR09NG，N管 8A 1400mΩ 典型1150mΩ

型号：FR09NG

电压电流：900V8A

内阻：1400mΩ 典型1150mΩ

N管

封装：TO-220F

Description： 

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. 

Features：

1) VDS=900V,ID=9A,RDS(ON)<1.4Ω@VGS=10V 

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.