CMOS集成电路工艺基本流程

CMOS集成电路基本工艺流程
basic process flow of CMOS integrated circuits

一、反相器版图 (layout of an inverter)

展现版图层次(show all the layers of the layout):

二、工艺流程
(一)
1、通过热氧化形成二氧化硅薄膜 (silicon oxide film is formed by thermal oxidizing)

2、通过CVD形成氮化硅薄膜 (silicon nitride film is formed using the CVD method)

3、旋涂光刻胶 (spin-on photoresist)

4、使用active掩模板(Dark tone)(use mask of active (Dark tone) )

5、曝光 (expose)
没有被active图形覆盖的光刻胶均被曝光(all the photoresist uncovered by active pattern are exposed)

6、显影(develop)
图形被转移至光刻胶(a photoresist pattern is formed)

7、刻蚀氮化硅薄膜(etching the silicon nitride film)


8、刻蚀硅衬底形成浅沟槽(shallow trenches are cut by etching the silicon wafer)


(二)N阱
10、通过CVD方法对沟槽填充厚二氧化硅
(trenches are filled by forming a thick silicon oxide film using the CVD method)

抛光后通过化学方法去除氧化硅(the silicon nitride film is removed using chemical treatment after polishing)

11、旋涂光刻胶(spin-on photoresist)

12、使用Nwell掩模板(Clear tone)(use mask of Nwell (Clear tone))

13、曝光(expose)
被Nwell图形覆盖的光刻胶均被曝光(all the photoresist covered by Nwell pattern are exposed)

14、显影(develop)
图形被转移至光刻胶(a photoresist pattern is formed)

15、在Nwell区域进行N型离子注入(N-type impurities are implanted in the Nwell area)
未被光刻胶覆盖的区域才能被注入杂质
(only the area uncovered by photoresist can be implanted)

16、Nwell形成并去除光刻胶(Nwell is formed followed by removing photoresist)

(三)栅极
17、通过CVD形成多晶硅/旋涂光刻胶/使用gate掩模板(Dark tone)


18、曝光(expose)
没有被gate图形覆盖的光刻胶均被曝光(all the photoresist uncovered by gate pattern are exposed)

19、显影(develop)

20、通过刻蚀氧化硅和栅氧化层形成栅极
(the gate is formed by etching the polysilicon and gate oxide film)

(四)nldd区域
21、旋涂光刻胶/使用nldd掩模板(Clear tone)(spin-on photoresist/use mask of nldd(Clear tone))

nldd层是基于n+层进行计算得到(nldd layer is calculated based on n-plus layer)

22、曝光(expose)
被nldd图形覆盖的光刻胶均被曝光(all the photoresist covered by nldd pattern are exposed)

23、显影(develop)

24、在nldd区域进行N型离子注入(N-type impurities are implanted in the nldd area)

25、N型轻掺杂形成并去除光刻胶(nldd is formed followed by removing photoresist)

(五)pldd区域
26、旋涂光刻胶(spin-on photoresist)

27、使用pldd掩模板(Clear tone)(use mask of pldd (Clear tone))
pldd层是基于p+进行计算得到的(pldd layer is calculated based on p-plus layer)

28、曝光(exposure)
被pldd图形覆盖的光刻胶均被曝光(all the photoresist covered by pldd pattern are exposed)

29、显影(develop)

30、在pldd区域进行P型离子注入(P-type impurities are implanted in the pldd area)

31、P型轻掺杂形成并去除光刻胶(pldd is formed followed by removing photoresist)

32、通过CVD方法全局沉淀二氧化硅薄膜(a silicon oxide film is formed using the CVD method)

33、通过二氧化硅进行各向异性刻蚀在栅极两侧形成侧墙
(anisotropic etching is performed to leave an oxide film only at the gate side walls)

(六)n+区域
34、旋涂光刻胶/使用n+掩模板(Clear tone)(spin-on photoresist/ use mask of n-plus(Clear tone))


35、曝光(exposure)

36、显影(develop)

37、在n+区域进行N型离子注入(N-type impurities are implanted in the n-plus area)

38、N+注入形成并去除光刻胶(n-plus is formed followed by removing photoresist)

(七)p+区域
39、旋涂光刻胶/使用p+掩模板(spin-on photoresist/ use mask of p-plus(Clear tone))


40、曝光(exposure)

41、显影(develop)

42、在p+区域进行P型离子注入(P-type impurities are implanted in the p-plus area)

43、P+注入形成并去除光刻胶(p-plus is formed by removing photoresist)

44、通过PVD在晶圆表面溅射金属钴薄膜(a cobalt film is formed on the silicon wafer surface using the PVD)

45、通过加热使与硅接触的钴变成金属硅化物(through heating, the cobalt that is in contact to silicon changes to cobalt silicide )

46、通过化学腐蚀去除掉剩余的金属钴薄膜
(the remained cobalt film is removed selectively by chemical etching)

47、通过CVD在晶圆表面形成厚二氧化硅膜
(a thick film of silicon oxide is formed on the wafer surface using CVD method)

(八)打contact
48、旋涂光刻胶/使用contact 掩模板(spin-on photoresist/ use mask of contact(Clear tone))


49、曝光(exposure)

50、显影(develop)

51、通过刻蚀处理在二氧化硅电介质层上形成接触孔
(contact holes are formed in the dielectric film by etching treatment)

52、刻蚀接触空后去除光刻胶(after etching, the photoresist is removed)

53、通过CVD沉积金属钨(a tungsten film is formed using CVD method)


54、通过抛光去除多余金属钨,仅保留通孔中的钨
(the surface is polished and excess tungsten film is removed. Tungsten is left only in the contact holes.)


(九)M1
55、通过PVD在晶圆表面溅射M1(a thick film of metal 1 is formed using the PVD method)

56、旋涂光刻胶/使用M1掩模板(Dark tone)(spin-on photoresist/ use mask of M1(Clear tone))

57、曝光(exposure)

58、显影(develop)


59、通过刻蚀去除未被光刻胶覆盖的M1(M1 uncovered by photoresist are all removed through etching)

60、去除光刻胶,保留M1图形(M1 patterns are remained after removing photoresist)

