DTU60N02替代料号DB006NG-S，兼容替换DTU60N02，20V60A TO-252封装

DTU60N02替代料号DB006NG-S，兼容替换DTU60N02，20V60A TO-252封装

型号：DB006NG-S

N管

电压电流：20V60A

内阻：RDS(ON)<6mΩ@VGS=4.5V

封装：TO-252

Description：

This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with lowgate charge.

It can be used in a wide variety of applications.

Features：

1) VDS=20V,ID=60A,RDS(ON)<6mΩ@VGS=4.5V

2) Low gate charge. 

3) Green device available. 

4) Advanced high cell denity trench technology for ultra Iow RDS(ON).

5) Excellent package for good heat dissipation.